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Freescale Semiconductor Technical Data
Document Number: MRF9030N Rev. 12, 9/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
* Typical Performance at 945 MHz, 26 Volts Output Power -- 30 Watts PEP Power Gain -- 20 dB Efficiency -- 41% (Two Tones) IMD -- - 31 dBc * Integrated ESD Protection * Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RJC
945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
CASE 1265 - 09, STYLE 1 TO - 270- 2 PLASTIC
Value - 0.5, +65 - 0.5, + 15 139 0.93 - 65 to +150 200
Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Value (1) 1.08 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M2 (Minimum) C7 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF9030NR1 1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.
MRF9030NR1
Table 5. Electrical Characteristics (Tc = 25c Unless Otherwise Noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc
Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc)
Adc
On Characteristics
Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 0.7 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) VGS(th) VGS(Q) VDS(on) gfs 2 3 -- -- 2.9 3.8 0.23 2.7 4 5 0.4 -- Vdc Vdc Vdc S
Dynamic Characteristics
Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 49 27 1.2 -- -- -- pF pF pF
Functional Tests (In Freescale Test Fixture)
Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps 18 20 -- dB
37
41
--
%
IMD
--
- 31
- 28
dBc
IRL
--
- 13
-9
dB
Gps
--
20
--
dB
--
40.5
--
%
IMD
--
- 31
--
dBc
IRL
--
- 12
--
dB
MRF9030NR1 2 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc)
Adc
B1 VGG + C8 C7 L1 L2
B2 VDD + C15 C16 + C17 + C18
RF INPUT
C5 Z1 C1 C2 C3 C4 C6 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 DUT Z11
C9 Z12 Z13 Z14 Z15 Z16 Z17 C14 C10 C11 C12 C13 Z18
RF OUTPUT
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
0.260 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.200 x 0.270 Microstrip 0.330 x 0.270 Microstrip 0.140 x 0.270 x 0.520, Taper 0.040 x 0.520 Microstrip 0.090 x 0.520 Microstrip 0.370 x 0.520 Microstrip (MRF9030NR1) 0.290 x 0.520 Microstrip (MRF9030NBR1) 0.130 x 0.520 Microstrip (MRF9030NR1) 0.210 x 0.520 Microstrip (MRF9030NBR1)
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board
0.360 x 0.270 Microstrip 0.050 x 0.270 Microstrip 0.110 x 0.060 Microstrip 0.220 x 0.060 Microstrip 0.100 x 0.060 Microstrip 0.870 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.340 x 0.060 Microstrip Taconic RF - 35- 0300, r = 3.5
Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic
Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part B1 B2 C1, C7, C14, C15 C2 C3, C11 C4, C12 C5, C6 C8, C16, C17 C9, C10 C13 C18 L1, L2 Description Short Ferrite Bead, Surface Mount Long Ferrite Bead, Surface Mount 47 pF Chip Capacitors 0.6- 4.5 Variable Capacitor, Gigatrim 3.9 pF Chip Capacitors 0.8- 8.0 Variable Capacitors, Gigatrim 6.8 pF Chip Capacitors 10 F, 35 V Tantulum Chip Capacitors 10 pF Chip Capacitors 1.8 pF Chip Capacitor (MRF9030NR1) 0.6- 4.5 Variable Capacitor, Gigatrim (MRF9030NBR1) 220 F Electrolytic Chip Capacitor 12.5 nH Coilcraft Inductors Part Number 2743019447 2743029446 ATC100B470JT500XT 27271SL ATC100B3R6BT500XT 27291SL ATC100B7R5JT500XT T491D106K035AT ATC100B100JT500XT ATC100B1R8BT500XT 27271SL MCAX63V227M13X22 A04T- 5 Manufacturer Fair- Rite Fair- Rite ATC Johanson ATC Johanson ATC Kemet ATC ATC Johanson Multicomp Coilcraft
MRF9030NR1 RF Device Data Freescale Semiconductor 3
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
C18
C8 VGG
B1 B2 C7 C15 C16 C17
VDD
C1 L1 C2
C5 CUT OUT AREA C9 WB2 C10
L2
C14
C4 WB1 C3 C6
C11
C12
C13
900 MHz Rev 02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout
MRF9030NR1 4 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
TYPICAL CHARACTERISTICS
h , DRAIN EFFICIENCY (%) 22 21 G ps , POWER GAIN (dB) 20 19 18 17 16 15 14 930 IRL VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two-Tone, 100 kHz Tone Spacing 935 940 945 950 955 IMD Gps 50 45 40 35 -30 -32 -34 -36
-10 -12 -14 -16 -18 IRL, INPUT RETURN LOSS (dB)
-38 960
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
IMD, INTERMODULATION DISTORTION (dBc)
21.5 21 G ps , POWER GAIN (dB) 20.5 300 mA 20 250 mA 19.5 200 mA 19 18.5 0.1 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 1 10 100
-15 -20 -25 -30 -35 -40 -45 -50 -55 0.1 250 mA 1 300 mA VDD = 26 Vdc 375 mA f1 = 945 MHz f2 = 945.1 MHz 10 100 IDQ = 200 mA
IDQ = 375 mA
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 -60 7th Order -70 -80 0.1 5th Order VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz 3rd Order
22 20 G ps , POWER GAIN (dB) 18 16 14 12 10 0.1 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz 1 10 Gps
60 50 40 30 20 10 0 100 , DRAIN EFFICIENCY (%)
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Intermodulation Distortion Products versus Output Power
Figure 7. Power Gain and Efficiency versus Output Power
MRF9030NR1 RF Device Data Freescale Semiconductor 5
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 22 20 G ps , POWER GAIN (dB) Gps 60 40 20 16 14 12 10 0.1 VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz 0 -20 -40 -60 100
IMD
1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD versus Output Power
1010 MTTF FACTOR (HOURS X AMPS2)
109
108
107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
MRF9030NR1 6 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
18
Zo = 5 Zsource f = 930 MHz f = 960 MHz
Zload f = 960 MHz
f = 930 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP) f MHz 930 945 960 Zsource 1.07 + j0.160 1.14 + j0.385 1.17 + j0.170 Zload 3.53 - j0.20 3.41 - j0.24 3.60 - j0.17
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion.
Note:
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF9030NR1 RF Device Data Freescale Semiconductor 7
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
PACKAGE DIMENSIONS
MRF9030NR1 8 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
RF Device Data Freescale Semiconductor
MRF9030NR1
9
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
10
MRF9030NR1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 12 Date Sept. 2008 Description * Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. * Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 8 - 10. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. * Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 * Removed Fig. 3, Test Circuit Component Layout (MRF9030NBR1) and Fig. 12, Series Equivalent Source and Load Impedance (MRF9030NBR1), renumbered Figures accordingly, p. 4 - 7 * Added Product Documentation and Revision History, p. 11
MRF9030NR1 RF Device Data Freescale Semiconductor 11
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
How to Reach Us:
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MRF9030NR1
Rev. 12 12, 9/2008 Document Number: MRF9030N
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN

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